News release: Identifying imperfections with Raman spectroscopy (pdf)
檔案大小: 2.25 MB
語言: English
An article in Compound Semiconductor magazine, October 2015, describes how Raman spectroscopy allows routine mapping of SiC wafers in little more than an hour.
此類檔案需要使用閱讀器,您可在以下網址免費獲得 Adobe
您是否未找到您要找的內容?
告訴我們您無法找到 我們將盡力提供援助